BDV65, BDV65a, BDV65b, BDV65c npn silicon power darlingtons
1 june 1993 - revised september 2002 specifications are subject to change without notice. designed for complementary use with bdv64, bdv64a, bdv64b and bdv64c 125 w at 25c case temperature 12 a continuous collector current minimum h fe of 1000 at 4 v, 5 a absolute maximum ratings at 25c case temperature (unless otherwise noted) notes: 1. this value applies for t p 0.1 ms, duty cycle 10% 2. derate linearly to 150c case temperature at the rate of 0.56 w/c. 3. derate linearly to 150c free air temperature at the rate of 28 mw/c. rating symbol value unit collector-base voltage (i e = 0) BDV65 BDV65a BDV65b BDV65c v cbo 60 80 100 120 v collector-emitter voltage (i b = 0) BDV65 BDV65a BDV65b BDV65c v ceo 60 80 100 120 v emitter-base voltage v ebo 5v continuous collector current i c 12 a peak collector current (see note 1) i cm 15 a continuous base current i b 0.5 a continuous device dissipation at (or below) 25c case temperature (see note 2) p tot 125 w continuous device dissipation at (or below) 25c free air temperature (see note 3) p tot 3.5 w operating junction temperature range t j -65 to +150 c storage temperature range t stg -65 to +150 c lead temperature 3.2 mm from case for 10 seconds t l 260 c sot-93 package (top view) pin 2 is in electrical contact with the mounting base. mdtraaa b c e 1 2 3
BDV65, BDV65a, BDV65b, BDV65c npn silicon power darlingtons 2
june 1993 - revised september 2002 specifications are subject to change without notice. notes: 4. these parameters must be measured using pulse techniques, t p = 300 s, duty cycle 2%. 5. these parameters must be measured using voltage-sensing contacts, separate from the current carrying conta cts. electrical characteristics at 25c case temperature (unless otherwise noted) parameter test conditions min typ max unit v (br)ceo collector-emitter breakdown voltage i c = 30 ma i b = 0 (see note 4) BDV65 BDV65a BDV65b BDV65c 60 80 100 120 v i ceo collector-emitter cut-off current v cb = 30 v v cb = 40 v v cb = 50 v v cb = 60 v i b =0 i b =0 i b =0 i b =0 BDV65 BDV65a BDV65b BDV65c 2 2 2 2 ma i cbo collector cut-off current v cb = 60 v v cb = 80 v v cb = 100 v v cb = 120 v v cb = 30 v v cb = 40 v v cb = 50 v v cb = 60 v i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 i e =0 t c = 150c t c = 150c t c = 150c t c = 150c BDV65 BDV65a BDV65b BDV65c BDV65 BDV65a BDV65b BDV65c 0.4 0.4 0.4 0.4 2 2 2 2 ma i ebo emitter cut-off current v eb = 5 v i c =0 5 ma h fe forward current transfer ratio v ce = 4 v i c = 5 a (see notes 4 and 5) 1000 v ce(sat) collector-emitter saturation voltage i b = 20 ma i c = 5 a (see notes 4 and 5) 2 v v be base-emitter voltage v ce = 4 v i c = 5 a (see notes 4 and 5) 2.5 v v ec parallel diode forward voltage i e = 10 a i b = 0 (see notes 4 and 5) 3.5 v thermal characteristics parameter min typ max unit r jc junction to case thermal resistance 1c/w r ja junction to free air thermal resistance 35.7 c/w
BDV65, BDV65a, BDV65b, BDV65c npn silicon power darlingtons 3
june 1993 - revised september 2002 specifications are subject to change without notice. typical characteristics figure 1. figure 2. figure 3. typical dc current gain vs collector current i c - collector current - a 05 20 10 10 h fe - typical dc current gain 70000 100 1000 10000 tcs140ad v ce = 4 v t p = 300 s, duty cycle < 2% t c = -40c t c = 25c t c = 100c collector-emitter saturation voltage vs collector current i c - collector current - a 05 20 10 10 v ce(sat) - collector-emitter saturation voltage - v 0 05 10 15 20 tcs140ae t p = 300 s, duty cycle < 2% i b = i c / 100 t c = -40c t c = 25c t c = 100c base-emitter saturation voltage vs collector current i c - collector current - a 05 20 10 10 v be(sat) - base-emitter saturation voltage - v 0 05 10 15 20 25 30 tcs140af t c = -40c t c = 25c t c = 100c i b = i c / 100 t p = 300 s, duty cycle < 2%
BDV65, BDV65a, BDV65b, BDV65c npn silicon power darlingtons 4
june 1993 - revised september 2002 specifications are subject to change without notice. thermal information figure 4. maximum power dissipation vs case temperature t c - case temperature - c 0 25 50 75 100 125 150 p tot - maximum power dissipation - w 0 20 40 60 80 100 120 140 tis140aa
|
